| PART |
Description |
Maker |
| TPCP8602 |
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications
|
Toshiba Semiconductor
|
| 4816P-1-181 4816P-3-331/471 4816P-3-161/241 4814P- |
RNET-THK FILM SMD MED BODY RESISTOR, NETWORK, FILM, ISOLATED, 1.28 W, SURFACE MOUNT
RNET-THK FILM SMD MED BODY RESISTOR, NETWORK, FILM, TERMINATOR, 1.28 W, SURFACE MOUNT
RNET-THK FILM SMD MED BODY RESISTOR, NETWORK, FILM, ISOLATED, 1.12 W, SURFACE MOUNT
RES NTWK,Thick Film,100Ohms,50WV,2 /-% Tol,-100,100ppm-TC,4422-Case RoHS Compliant: Yes RESISTOR, NETWORK, FILM, ISOLATED, 1.28 W, SURFACE MOUNT
|
Bourns, Inc.
|
| 2SA1160 E000473 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| E000975 2SC4682 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba
|
| 2SC4681 |
NPN EPITAXIAL TYPE (STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SA116007 2SA1160 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC307205 2SC3072 2SC3072-05 |
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SA1431-Y |
5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC2500 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
|
